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                     BYC58X-600_1 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 23 February 2010 5 of 11 NXP Semiconductors BYC58X-600 8 A hyperfast rectifier diode 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF forward voltage IF =8A; Tj = 25 °C; see Figure 4 - 2.35 3.2 V IF =8A; Tj = 150 °C; see Figure 4 -22.4V IR reverse current VR =600V; Tj = 25 °C - - 150 μA Dynamic characteristics Qr recovered charge IF =8A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 125 °C; see Figure 5 and 6 -40-nC trr reverse recovery time IF =8A; VR = 400 V; dIF/dt = 200 A/μs; Tj =25°C; see Figure 6 - 12.5 - ns IF =8A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 125 °C; see Figure 6 and 7 -21-ns IRM peak reverse recovery IF =8A; VR = 400 V; dIF/dt = 200 A/μs; current Tj = 125 °C -45.5A Fig 4. Forward current as a function of forward voltage Fig 5. Recovered charge as a function of rate of change of forward current; Tj = 125 °C; typical values 003aae163 0 01234 VF (V) 4 8 12 16 20 IF (A) (1) (2) (3) dIF/dt (A/μs) 0 500100 200 300 400 003aae182 140 Qr (nC) 100 60 20 0 40 80 120 (1) (2) (3) |